Effect of Cu deficiency on the optical properties and electronic structure of CuInSe2 and CuIn0.8Ga0.2Se2 determined by spectroscopic ellipsometry

被引：39

作者：

Han, SH ^{[1
]}

Hermann, AM

Hasoon, FS

Al-Thani, HA

Levi, DH

机构：

[1] Univ Colorado, Dept Phys, Boulder, CO 80303 USA

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 04期

关键词：

D O I：

10.1063/1.1776616

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spectroscopic ellipsometry measurements of CuInSe2 (CIS) and CuIn0.8Ga0.2Se2 (CIGS) reveal that there are important differences in electronic properties between stoichiometric CIS (CIGS) and Cu-poor CIS (CIGS). We find a reduction in the absorption strength in the spectral region of 1-3 eV. This reduction can be explained in terms of the Cu 3d density of states. Cu-poor CIS (CIGS) materials show an increase in band gap due to the reduction in repulsion between Cu 3d and Se 4p states. The experimental results have important implications for the function of polycrystalline optoelectronic devices. (C) 2004 American Institute of Physics.

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页码：576 / 578

页数：3

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