Transition from weak to strong electronic localization in icosahedral AlPdRe

被引：17

作者：

Ahlgren, M

Rodmar, M

Gignoux, C

Berger, C

Rapp, O

机构：

[1] KUNGLIGA TEKN,FASTA TILLSTANDETS FYS,S-10044 STOCKHOLM,SWEDEN

[2] CNRS,LEPES,F-38042 GRENOBLE 9,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1997年 / 226卷

关键词：

quantum interference effects; magnetoresistance; quasicrystals; icosahedral AlPdRe;

D O I：

10.1016/S0921-5093(96)10831-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper we investigate when the transition from weak to strong localization takes place in icosahedral AlPdRe. This was made by determining an upper limit of the residual resistance ratio, RRR = rho(4.2 K)/rho(2.95 K), where theories of quantum interference effects (QIE) can account for the magnetoresistance in these materials. It was found that QIE can describe the magnetoresistance in samples with RRR up to about 10. For samples with higher RRR several observations strongly suggest that other transport mechanisms have to be considered. (C) 1997 Elsevier Science S.A.

引用

页码：981 / 985

页数：5

共 18 条

[1] MAGNETORESISTANCE OF ICOSAHEDRAL AL-CU-FE FROM 80 MK TO 80 K [J].