QUANTUM CORRECTIONS IN ALCUFE QUASI-CRYSTALS

被引：21

作者：

HABERKERN, R ^{[1
]}

FRITSCH, G ^{[1
]}

SCHILLING, J ^{[1
]}

机构：

[1] WASHINGTON UNIV, DEPT PHYS, ST LOUIS, MO 63130 USA

来源：

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1993年 / 92卷 / 03期

关键词：

D O I：

10.1007/BF01308758

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report measurements on Hall-Effect, magnetoresistivity and resistivity for the quasicrystal-system AlCuFe. Data for three different compositions exhibiting electrical resistivities of 4200, 8700 and 9600 muOMEGAcm's, are discussed in terms of quantum corrections in the temperature range 5 to 50 K. It will be shown that the Coulomb contribution of these corrections reacts sensitively to the composition of the quasicrystal.

引用

页码：383 / 387

页数：5

共 9 条

[1]

Altshuler B. L., 1985, ELECT ELECT INTERACT

[2] WEAK LOCALIZATION IN THIN-FILMS - A TIME-OF-FLIGHT EXPERIMENT WITH CONDUCTION ELECTRONS [J].