Changes in Al-related photoluminescence in 4H-SiC caused by hydrogenation

被引：9

作者：

Koshka, Y

Mazzola, MS

Draper, WA

机构：

[1] Mississippi State Univ, Dept Elect & Comp Engn, Mississippi State, MS 39762 USA

[2] SemiSouth Labs Inc, Starkville, MS 39759 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 25期

关键词：

D O I：

10.1063/1.1489483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Both reduction of the intensity of aluminum-related photoluminescence after hydrogenation and the phenomenon of the optical quenching of the Al bound exciton (Al-BE) previously reported for hydrogenated 6H-SiC was observed now in the 4H-SiC polytype. Hydrogenation caused also a reduction of the nitrogen-aluminum donor-acceptor pair emission. Prolonged excitation of hydrogenated samples with above-band gap light resulted in additional quenching of the residual Al-BE photoluminescence. The quenching kinetics and some differences between the 6H and 4H polytypes are investigated. The observed phenomena are attributed to optically enhanced passivation of Al acceptors with hydrogen. (C) 2002 American Institute of Physics.

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页码：4762 / 4764

页数：3

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