Magnetic properties of 3d impurities substituted in GaAs

被引：19

作者：

Mirbt, S

Sanyal, B

Mohn, P

机构：

[1] Uppsala Univ, Dept Phys, Uppsala, Sweden

[2] Vienna Univ Technol, CMS, A-1060 Vienna, Austria

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2002年 / 14卷 / 12期

关键词：

D O I：

10.1088/0953-8984/14/12/316

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have calculated the magnetic properties of substituted 3d impurities (Cr-Ni) in a GaAs host by means of first-principles electronic structure calculations. We provide a novel model explaining the ferromagnetic long-range order of III-V dilute magnetic semiconductors. The origin of the ferromagnetism is shown to be delocalized spin-uncompensated As dangling-bond electrons. Besides the quantitative prediction of the magnetic moments, our model provides an understanding of the half-metallicity, and the rise of the critical temperature with the impurity concentration.

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收藏

页码：3295 / 3302

页数：8

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