Raman shifts in Si nanocrystals

被引：409

作者：

Zi, J

Buscher, H

Falter, C

Ludwig, W

Zhang, KM

Xie, XD

机构：

[1] FUDAN UNIV, SURFACE PHYS LAB, SHANGHAI 200433, PEOPLES R CHINA

[2] UNIV MUNSTER, INST THEORET PHYS 2, WILHELM KLEMM STR 10, D-48149 MUNSTER, GERMANY

[3] CHINESE CTR ADV SCI & TECHNOL, WORLD LAB, BEIJING 100080, PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 02期

关键词：

D O I：

10.1063/1.117371

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman shifts of Si nanocrystals versus size were studied theoretically by a bond polarizability model. Zero-dimensional spheres and one-dimensional columns were considered. The relation between the Raman shift and the size for Si spheres and columns was established, from which the size of Si nanocrystals can be obtained for a given Raman shift or vice versa. (C) 1996 American Institute of Physics.

引用

页码：200 / 202

页数：3

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