The growth of mid-infrared lasers and AlAsxSb1-x by MOCVD

We have grown AlSb and AlAsxSb1-x epitaxial layers by metal-organic chemical vapor deposition (MOCVD) using trimethylamine alane or ethyldimethylamine alane, triethylantimony, and arsine. These layers were successfully doped por n-type using diethylzinc or tetraethyltin, respectively. We examined the growth of AlAsxSb1-x using temperatures of 500-600 degrees C, pressures of 65-630 Torr, V/III ratios of 1-17, and growth rates of 0.3-2.7 mu m/h in a horizontal quartz reactor. We have also fabricated gain-guided, injection lasers using AlAsxSb1-x for optical confinement and a strained InAsSb/InAs multi-quantum well active region grown using MOCVD. In pulsed mode, the laser operated up to 210 K with an emission wavelength of 3.8-3.9 mu m.