High gain-bandwidth-product silicon heterointerface photodetector

被引：82

作者：

Hawkins, AR

Wu, WS

Abraham, P

Streubel, K

Bowers, JE

机构：

[1] Elec. and Comp. Eng. Department, University of California, Santa Barbara

[2] Dept. Photonics and Microwave Eng., Royal Institute of Technology, Electrum 229

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 03期

关键词：

D O I：

10.1063/1.118399

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication of a near-infrared avalanche photodetector with a gain-bandwidth product of over 300 GHz. The detector uses a Si multiplication layer and an InGaAs absorption layer. A 3 dB bandwidth of over 9 GHz was measured for current gains as high as 35. Photocurrent measurements using 1.3 mu m light indicate a quantum efficiency for the detector of 0.60, near the limit expected based on the absorber thickness. (C) 1997 American Institute of Physics.

引用

页码：303 / 305

页数：3

共 5 条

[1] Silicon heterointerface photodetector [J].