Silicon heterointerface photodetector

被引：67

作者：

Hawkins, AR ^{[1
]}

Reynolds, TE ^{[1
]}

England, DR ^{[1
]}

Babic, DI ^{[1
]}

Mondry, MJ ^{[1
]}

Streubel, K ^{[1
]}

Bowers, JE ^{[1
]}

机构：

[1] ROYAL INST TECHNOL,DEPT PHOTON & MICROWAVE ENGN,S-16440 KISTA,SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 26期

关键词：

D O I：

10.1063/1.115975

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the demonstration of an infrared avalanche photodetector that uses an InGaAs absorption layer and a Si avalanche multiplication layer bonded by wafer fusion. Photocurrent measurements of the silicon heterointerface photodetector showed high response to 1.3 mu m light and gains of up to 130. Frequency response measurements for the detectors yielded 3 dB bandwidth products of up to 81 GHz. (C) 1996 American Institute of Physics.

引用

页码：3692 / 3694

页数：3

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