AFM-based fabrication of Si nanostructures

被引：14

作者：

Campbell, PM ^{[1
]}

Snow, ES ^{[1
]}

McMarr, PJ ^{[1
]}

机构：

[1] SFA INC,LANDOVER,MD 20785

来源：

PHYSICA B | 1996年 / 227卷 / 1-4期

关键词：

nanofabrication; silicon nanostructures; atomic force microscope; anodic oxidation;

D O I：

10.1016/0921-4526(96)00429-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report the fabrication of nanometer-scale Si structures by using an atomic force microscope to write surface-oxide patterns by the local anodic oxidation of a H-passivated Si (100) surface. These oxide patterns were used as masks for selective etching of the silicon. Side-gated Si field effect transistors with critical features as small as 30 nm have been fabricated by this method.

引用

收藏

页码：315 / 317

页数：3

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