Stability of Ionic Liquid-Gated Metal Oxides and Transistors

被引：8

作者：

Bubel, Simon ^{[1
]}

Meyer, Sebastian ^{[2
]}

Chabinyc, Michael L. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Mat Res Lab, Santa Barbara, CA 93106 USA

[2] Univ Duisburg Essen, Ctr NanoIntegrat Duisburg Essen, D-47057 Duisburg, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 05期

关键词：

Degradation; electrolyte; electronic double layer; gold leaching; imidazolium; ion gel; ionic liquid (IL); stains; tetracyanoborate (TCB); turbidity; zinc oxide; FIELD-EFFECT TRANSISTORS; INSULATOR-TRANSITION; HIGH-MOBILITY; ELECTROCHEMISTRY; GOLD; SUPPRESSION; OXYGEN; VO2;

D O I：

10.1109/TED.2014.2308141

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ionic liquids (ILs) and their gels are considered for low-voltage and flexible devices due to their ease of processing, freedom in device design, and the realization of high electrostatic fields at low bias voltages. If IL-gated devices are operated at electrochemically stable biases of their individual compounds, they are believed to be reliable. However, small instabilities at interfaces to amorphous oxide semiconductors can lead to secondary instabilities and even the decomposition of gold electrodes, in this paper shown for the case of cyano containing anions.

引用

页码：1561 / 1566

页数：6

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