Tuning of the metal-insulator transition in electrolyte-gated NdNiO3 thin films

被引：98

作者：

Asanuma, S. ^{[1
,2
]}

Xiang, P. -H. ^{[1
,2
]}

Yamada, H. ^{[1
]}

Sato, H. ^{[1
,2
]}

Inoue, I. H. ^{[1
,2
]}

Akoh, H. ^{[1
,2
]}

Sawa, A. ^{[1
,2
]}

Ueno, K. ^{[3
]}

Shimotani, H. ^{[4
]}

Yuan, H. ^{[4
]}

Kawasaki, M. ^{[3
,5
]}

Iwasa, Y. ^{[4
,5
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, Japan

[2] Japan Sci & Technol Agcy JST, CREST, Tokyo 1020075, Japan

[3] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

[4] Univ Tokyo, Sch Engn, Quantum Phase Elect Ctr, Tokyo 1130033, Japan

[5] RIKEN, CERG, Wako, Saitama 3510198, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 14期

关键词：

MOTT TRANSITION; SUPERCONDUCTIVITY; PEROVSKITES; TRANSISTOR;

D O I：

10.1063/1.3496458

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate electrostatic control of the metal-insulator transition in the typical correlated-electron material NdNiO3 through a large effective capacitance of the electric double layer at the electrolyte/NdNiO3 interface. The metal-insulator transition temperature (T-MI) of NdNiO3 is shown to decrease drastically with increasing hole concentration through the application of a negative gate voltage (V-G). The shift in T-MI (vertical bar Delta T-MI vertical bar) is larger for thinner NdNiO3; for VG of -2.5 V, vertical bar T-MI vertical bar of 5-nm-thick NdNiO3 is as large as 40 K, and the resistivity change near 95 K is one order of magnitude. This study may be potentially applicable to Mott transistor devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3496458]

引用

页数：3

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