Electric double layer transistor with a (Ga,Mn)As channel

被引：38

作者：

Endo, M. ^{[1
]}

Chiba, D. ^{[1
,2
]}

Shimotani, H. ^{[3
,4
]}

Matsukura, F. ^{[1
,2
]}

Iwasa, Y. ^{[3
,4
]}

Ohno, H. ^{[1
,2
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Japan Sci & Technol Agcy, Exploratory Res Adv Technol ERATO, Semicond Spintron Project, Chiyoda Ku, Tokyo 1020075, Japan

[3] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[4] Japan Sci & Technol Agcy, Core Res Evolut Sci & Technol CREST, Chiyoda Ku, Tokyo 1020075, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 02期

关键词：

Curie temperature; ferromagnetic materials; gallium arsenide; III-V semiconductors; manganese compounds; MISFET; semimagnetic semiconductors; FERROMAGNETISM; SEMICONDUCTORS; MANIPULATION; TEMPERATURE; ANOMALIES;

D O I：

10.1063/1.3277146

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have fabricated electric double layer transistors with a (Ga,Mn)As channel to investigate the possibility of larger modulation of magnetism by the application of electric fields. The sheet conductance as well as the Curie temperature can be modulated up to a few tens of percents by application of gate voltage of a few volts, which is almost one-order of magnitude smaller than that required in conventional metal-insulator-semiconductor structures. The 14 K modulation of the Curie temperature by applying gate voltage ranging from -1 to 3 V is the highest modulation ratio reported so far in ferromagnetic semiconductors.

引用

页数：3

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