A novel low noise hydrogenated amorphous silicon pixel detector

被引：13

作者：

Moraes, D ^{[1
]}

Anelli, G

Despeisse, M

Dissertori, G

Garrigos, A

Jarron, P

Kaplon, J

Miazza, C

Shah, A

Viertel, GM

Wyrsch, N

机构：

[1] CERN, CH-1211 Geneva 23, Switzerland

[2] ETH, Lab Hochenenergiephys, CH-8093 Zurich, Switzerland

[3] IMT, CH-2000 Neuchatel, Switzerland

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2004年 / 338卷

关键词：

D O I：

10.1016/j.jnoncrysol.2004.03.078

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Firsts results on particle detection using a novel silicon pixel detector are presented. The sensor consists of an array of 48 square pixels with 380 mum pitch based on a n-i-p hydrogenated amorphous silicon (a-Si:H) film deposited on top of a VLSI chip. The deposition was performed by VHF-PECVD, which enables high rate deposition up to 2 nm/s. Direct particle detection using beta particles from Ni-63 and Sr-90 sources was performed. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：729 / 731

页数：3

共 7 条

[1]

ANELLI G, 2003, MAT RES SOC SPR S

[2]

ANELLI G, 2003, 9 PIS M ADV DET

[3] THICK (SIMILAR-TO-50-MU-M) AMORPHOUS-SILICON P-I-N-DIODES FOR DIRECT-DETECTION OF MINIMUM IONIZING PARTICLES [J].