sp3-hybridized framework structure of group-14 elements discovered by genetic algorithm

被引:24
作者
Manh Cuong Nguyen [1 ]
Zhao, Xin
Wang, Cai-Zhuang
Ho, Kai-Ming
机构
[1] Iowa State Univ, US DOE, Ames Lab, Ames, IA 50011 USA
关键词
CRYSTAL-STRUCTURE; BAND-GAP; SILICON; SEMICONDUCTORS; FORM; SI; 1ST-PRINCIPLES; OPTIMIZATION; CANDIDATES; PREDICTION;
D O I
10.1103/PhysRevB.89.184112
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Group-14 elements, including C, Si, Ge, and Sn, can form various stable and metastable structures. Finding new metastable structures of group-14 elements with desirable physical properties for new technological applications has attracted a lot of interest. Using a genetic algorithm, we discovered a new low-energy metastable distorted sp(3)-hybridized framework structure of the group-14 elements. It has P4(2)/mnm symmetry with 12 atoms per unit cell. The void volume of this structure is as large as 139.7 angstrom(3) for Si P4(2)/mnm, and it can be used for gas or metal-atom encapsulation. Band-structure calculations show that P4(2)/mnm structures of Si and Ge are semiconducting with energy band gaps close to the optimal values for optoelectronic or photovoltaic applications. With metal-atom encapsulation, the P4(2)/mnm structure would also be a candidate for rattling-mediated superconducting or used as thermoelectric materials.
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页数:6
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