ELECTRICAL BAND-GAP OF POROUS SILICON

被引：33

作者：

CHEN, ZL

LEE, TY

BOSMAN, G

机构：

[1] Department of Electrical Engineering, University of Florida, Gainesville

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 25期

关键词：

D O I：

10.1063/1.111237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical band gap of porous silicon is determined from measurements of the reverse bias current of homojunction pn porous silicon diodes versus temperature, resulting in a value of 2.2 eV. This value is in good agreement with the value of 1.97 eV obtained from photo- and electroluminescence experiments.

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页码：3446 / 3448

页数：3

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