Erosion of Si- and Ti doped graphites due to deuterium irradiation

被引:23
作者
Roth, J
Plank, H
Schworer, R
机构
来源
PHYSICA SCRIPTA | 1996年 / T64卷
关键词
D O I
10.1088/0031-8949/1996/T64/010
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
During irradiation of carbon materials with hydrogen ions hydrocarbon molecules are formed resulting in an enhancement of the erosion yield. At temperatures around 800K hydrocarbon molecules are released in a thermal activated process, while at low temperatures and low ion energies physical sputtering of lightly bound hydrocarbon radicals enhances the erosion yield. Doping of carbon materials with B, Si and Ti results in a reduction of its chemical reactivity with hydrogen ions. While B reduces drastically the thermal activated process it does not alter the sputtering of hydrocarbons at low energies. For isotropic graphites doped with 10 at% Si(LS10) and 10 at% Ti(LT10) it is shown that preferential erosion of carbon leads to enrichment of the dopant at the surface. The thermal activated hydrocarbon emission is reduced already at low ion fluences for LS10 and LT10, while the low energy process is only reduced after high fluence irradiation and carbon surface depletion in the case of Ti doping. Depending on the microstructure of the material a very pronounced surface topography develops. Carbidic grains protect the underlying carbon material from erosion until a columnar structure evolves. Due to the high threshold for physical sputtering of Ti the total erosion yield for LT10 shows the predicted threshold behaviour for physical sputtering.
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页码:67 / 70
页数:4
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