Femtosecond-scale response of GaAs to ultrafast laser pulses

被引：37

作者：

Dumitrica, T ^{[1
]}

Allen, RE ^{[1
]}

机构：

[1] Texas A&M Univ, Dept Phys, College Stn, TX 77843 USA

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.66.081202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present nonadiabatic simulations of the coherent response of crystalline GaAs irradiated by intense femtosecond-scale laser pulses. Above a threshold fluence, which corresponds to promotion of about 12% of the valence electrons into the conduction band, the lattice is destabilized and the electronic band gap collapses to zero. This confirms the nonthermal nature of recently observed structural changes driven by electronic excitations and occurring during the first few hundred femtoseconds.

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页码：812021 / 812024

页数：4

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