GaAs under intense ultrafast excitation: Response of the dielectric function

被引:176
作者
Huang, L
Callan, JP
Glezer, EN
Mazur, E
机构
[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
[2] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA
关键词
D O I
10.1103/PhysRevLett.80.185
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We used a new broadband spectroscopic technique to measure the dielectric function of GaAs over the spectral range of 1.5-3.5 eV following intense 70-fs laser excitation. The results provide the most detailed information thus far on the electron and lattice dynamics both above and below the fluence threshold for permanent damage, F-th = 1.0 kJ/m(2). There are three distinct regimes of behavior: lattice heating (<0.5F(th)), lattice disordering (0.6-0.8)F-th, and a semiconductor-to-metal transition (>0.8F(th)). Below F-th, the changes are completely reversible.
引用
收藏
页码:185 / 188
页数:4
相关论文
共 26 条
  • [1] FEMTOSECOND ELLIPSOMETRIC STUDY OF NONEQUILIBRIUM CARRIER DYNAMICS IN GE AND EPITAXIAL SI1-XGEX
    CHOO, HR
    HU, XF
    DOWNER, MC
    KESAN, VP
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (11) : 1507 - 1509
  • [2] Edwards D.F., 1985, Handbook of optical constants of solids
  • [3] OPTICAL-PROPERTIES AND DAMAGE ANALYSIS OF GAAS SINGLE-CRYSTALS PARTLY AMORPHIZED BY ION-IMPLANTATION
    ERMAN, M
    THEETEN, JB
    CHAMBON, P
    KELSO, SM
    ASPNES, DE
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2664 - 2671
  • [4] FROVEN S, 1983, PHYS REV B, V28, P3258
  • [5] BEHAVIOR OF CHI((2)) DURING A LASER-INDUCED PHASE-TRANSITION IN GAAS
    GLEZER, EN
    SIEGAL, Y
    HUANG, L
    MAZUR, E
    [J]. PHYSICAL REVIEW B, 1995, 51 (15): : 9589 - 9596
  • [6] LASER-INDUCED BAND-GAP COLLAPSE IN GAAS
    GLEZER, EN
    SIEGAL, Y
    HUANG, L
    MAZUR, E
    [J]. PHYSICAL REVIEW B, 1995, 51 (11): : 6959 - 6970
  • [7] TEMPERATURE-DEPENDENCE OF THE SHIFTS AND BROADENINGS OF THE CRITICAL-POINTS IN GAAS
    GOPALAN, S
    LAUTENSCHLAGER, P
    CARDONA, M
    [J]. PHYSICAL REVIEW B, 1987, 35 (11): : 5577 - 5584
  • [8] TIME-RESOLVED 2ND-HARMONIC STUDY OF FEMTOSECOND LASER-INDUCED DISORDERING OF GAAS-SURFACES
    GOVORKOV, SV
    SHUMAY, IL
    RUDOLPH, W
    SCHRODER, T
    [J]. OPTICS LETTERS, 1991, 16 (13) : 1013 - 1015
  • [9] Harrison W. A., 1989, ELECT STRUCTURE PROP
  • [10] MEASUREMENTS OF THE OPTICAL-PROPERTIES OF LIQUID SILICON AND GERMANIUM USING NANOSECOND TIME-RESOLVED ELLIPSOMETRY
    JELLISON, GE
    LOWNDES, DH
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (05) : 352 - 354