TEMPERATURE-DEPENDENCE OF THE SHIFTS AND BROADENINGS OF THE CRITICAL-POINTS IN GAAS

被引:132
作者
GOPALAN, S
LAUTENSCHLAGER, P
CARDONA, M
机构
来源
PHYSICAL REVIEW B | 1987年 / 35卷 / 11期
关键词
D O I
10.1103/PhysRevB.35.5577
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5577 / 5584
页数:8
相关论文
共 26 条
  • [1] THEORY OF TEMPERATURE-DEPENDENCE OF ELECTRONIC BAND STRUCTURES
    ALLEN, PB
    HEINE, V
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (12): : 2305 - 2312
  • [2] THEORY OF THE TEMPERATURE-DEPENDENCE OF THE DIRECT GAP OF GERMANIUM
    ALLEN, PB
    CARDONA, M
    [J]. PHYSICAL REVIEW B, 1981, 23 (04): : 1495 - 1505
  • [3] TEMPERATURE-DEPENDENCE OF THE DIRECT GAP OF SI AND GE
    ALLEN, PB
    CARDONA, M
    [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4760 - 4769
  • [4] A TETRAHEDRON METHOD FOR DOUBLY CONSTRAINED BRILLOUIN-ZONE INTEGRALS - APPLICATION TO SILICON OPTIC PHONON DECAY
    ALLEN, PB
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 120 (02): : 529 - 538
  • [5] Antoncik E., 1955, CZECH J PHYS, V5, P449
  • [6] TEMPERATURE-DEPENDENCE OF FUNDAMENTAL EDGE OF GERMANIUM AND ZINCBLENDE-TYPE SEMICONDUCTORS
    CAMASSEL, J
    AUVERGNE, D
    [J]. PHYSICAL REVIEW B, 1975, 12 (08): : 3258 - 3267
  • [7] CARDONA M, 1985, HELV PHYS ACTA, V58, P307
  • [8] CHRISTENSEN NE, 1984, PHYS REV B, V30, P5753, DOI 10.1103/PhysRevB.30.5753
  • [9] Cohen M. L., 1980, SEMICONDUCTOR HDB, V2
  • [10] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES
    COHEN, ML
    BERGSTRESSER, TK
    [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +