SiC MEMS: opportunities and challenges for applications in harsh environments

被引：262

作者：

Mehregany, M ^{[1
]}

Zorman, CA ^{[1
]}

机构：

[1] Case Western Reserve Univ, Dept Comp Sci & Elect, Microfabricat Lab, Cleveland, OH 44106 USA

来源：

THIN SOLID FILMS | 1999年 / 355卷

基金：

美国国家航空航天局;

关键词：

harsh environments; microelectrochemical systems; SiC;

D O I：

10.1016/S0257-8972(99)00374-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Many measurement and control applications requiring MEMS technology are in the presence of harsh environments, e.g. high temperatures, intense shock/vibrations, erosive flows, and corrosive media. Unlike Si, SIC as a semiconductor material is exceptionally well suited for addressing such application opportunities. However, many challenges must be met in order to develop a mature SiC MEMS fabrication technology. These challenges are primarily technical in nature and relate to material and processing aspects. This paper presents a review of recent advancements in areas that are critical to the establishment of a SiC MEMS technology. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：518 / 524

页数：7

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