Buffer layer-induced unusual rectifying behavior in La0.67Ca0.33MnO3/LaMnO3/SrTiO3:Nb junctions

被引：10

作者：

Lue, W. M.

Sun, J. R. ^{[1
]}

Chen, Y. Z.

Shen, B. G.

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 15期

基金：

中国国家自然科学基金;

关键词：

band structure; buffer layers; calcium compounds; lanthanum compounds; niobium; strontium compounds; thermionic emission;

D O I：

10.1063/1.3122343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Rectifying behavior has been studied for the La0.67Ca0.33MnO3/LaMnO3/SrTiO3:Nb junctions with a LaMnO3 layer between 0 and 12 nm. Different from the single-process behavior in the junction with a thin intermediate layer, the junction buffered by the LaMnO3 layer of 6 or 8 nm shows two distinctive processes with the character of thermionic emission. Based on the analyses of current-voltage characteristics, a spikelike and notchlike band structures in the two sides of the junctions are derived, with respectively, the interfacial barriers of similar to 0.75 and similar to 0.57 eV. The complex band structure is believed to be responsible for the two-process feature observed.

引用

页数：3

共 18 条

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[2]

Bibes M, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.134416

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