Asymmetric Coulomb staircase in a capacitive single electron transistor with an asymmetric bilayer tunnel barrier

Numerical calculations of electrical properties in a capacitive single electron transistor with an asymmetric bilayer tunnel barrier are presented. Our analysis is based on the semiclassical tunnelling model, but the particle tunnel rates through each junction are determined by directly calculating a golden rule equation. The asymmetric Coulomb staircase in the current vs drain voltage characteristics of the system is demonstrated. The current vs gate voltage characteristics of the system are also reported.