Fabrication of isotype (p-p) selenium-polyaniline heterojunction diode by electrochemical method

被引：16

作者：

Joshi, S. S. ^{[1
]}

Lokhande, C. D. ^{[1
]}

机构：

[1] Shivaji Univ, Dept Phys, Thin Film Lab, Kolhapur 416004, Maharashtra, India

来源：

APPLIED SURFACE SCIENCE | 2006年 / 252卷 / 24期

关键词：

heterojunction; isotype; junction ideality factor; selenium; polyaniline;

D O I：

10.1016/j.apsusc.2005.11.070

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In the present work, for the first time, heterojunction has been fabricated using electrochemically deposited isotype p-selenium-p-polyaniline from a single solution bath. The structural characterization of selenium and polyaniline thin film was carried out using XRD technique. Polyaniline exhibited amorphous structure while selenium offered monoclinic (beta) phase. The junction was formed by electrodepositing polyaniline over selenium film and heating at 423 K. The current density versus voltage (J-V) plot showed the formation of a junction with ideality factor of 1.16. From J-V characteristics at different temperatures, static resistance (R-s), dynamic resistance (R-d), and rectification ratio of diodes were determined. Heat treatment above 448 K caused junction breakdown. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：8539 / 8543

页数：5