Thermal Stress of 140nm-width Cu damascene interconnects

被引：12

作者：

Okada, N ^{[1
]}

Matsubara, Y ^{[1
]}

Kimura, H ^{[1
]}

Aizawa, H ^{[1
]}

Nakamura, N ^{[1
]}

机构：

[1] NEC Corp Ltd, ULSI Device Dev Div, Sagamihara, Kanagawa 2291198, Japan

来源：

PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2002年

关键词：

D O I：

10.1109/IITC.2002.1014912

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We found two failure modes induced by thermal process at 150degreesC and 350degreesC in 140nm Cu interconnects. One is two-dimensional (2D) agglomeration in which 140nm-width line metal is pulled into the wider root metal. The other is three-dimensional (3D) agglomeration in which 130nm via metal is pulled toward the upper wide metal. 140nm Cu structural analysis using EXAFS also shows two types of structure change, presumably corresponding to each failure modes.

引用

页码：136 / 138

页数：3