L-band internally matched Si-MMIC front-end

A 1.9 GHz-band internally matched Si-MMIC front-end, fabricated in standard 0.8 mu m BiCMOS process, was developed, This IC front-end contains a MOSFET T/R switch, a two-stage BJT low noise amplifier (LNA), and a down converter BJT mixer, Since the circuits are monolithically integrated on a low resistivity Si substrate, the coplanar waveguide (CPW) type spiral inductors are used to reduce the dielectric loss of on-chip matching circuits, The T/R switch has measured insertion loss of 2.5 dB and isolation of 25.5 db at 0/3 V control voltage, The two-stage LNA has gain of 17.1 dB and noise figure (NF) of 2.9 dB at 2 V, 4 mA de supply, The mixer has conversion gain of 5.9 dB and NF of 15 dB at 2 V, 1.7 mA de supply, The measured performance of the fabricated Si-MMIC front-end indicates the possibility of application to mobile communication handset terminals.