Pt doping of SnO2 thin films -: A transmission electron microscopy analysis of the porosity evolution

被引:20
作者
Matko, I
Gaidi, M
Chenevier, B
Charai, A
Saikaly, W
Labeau, M
机构
[1] Inst Natl Polytech Grenoble, Mat & Genie Phys Lab, CNRS, UMR 5628, F-38402 St Martin Dheres, France
[2] Fac Sci & Tech St Jerome, Lab Thermodynam Proprietes Elect Contraintes & St, CNRS, UMR 6122, F-13397 Marseille 20, France
关键词
D O I
10.1149/1.1488919
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
In Pt-doped SnO2 thin films prepared by using a submicroscopic aerosol pyrolysis method where the metal elements are codeposited, the best CO sensitivity is obtained from low concentration Pt precursor solutions. Transmission electron microscopy (TEM) observations of SnO2 thin films doped by small amounts of platinum have been performed to analyze in detail the structural properties as a function of Pt doping concentration. Strong evidence of porous structure has been found in the TEM images and an assessment of the porous volume fraction could be done. Although this approach clearly underestimates the assessed porous fraction, results for undoped SnO2 films nevertheless indicate that the film density is close to half of the bulk value. It increases with the film doping concentration, [Pt]/([Sn] + [Pt] + [O]), as films become thinner. For doping concentrations higher than 2%, no significant number of pores could be detected and the thickness reaches a plateau likely corresponding to the maximum density that can be obtained using our synthesis conditions. The usually observed maximum in the film sensitivity at solution concentrations close to 0.6% film doping, i.e., 3% in terms of solution concentration, coincides with a maximum in the product of the porous volume and the density of small Pt aggregates. Additionally, high-resolution electron microscopy observations of selected film samples have been performed to examine grain arrangements and microstructural effects of Pt and SnO2 nanocrystallites. (C) 2002 The Electrochemical Society.
引用
收藏
页码:H153 / H158
页数:6
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