Multiple phase structures of Hf silicide precipitated from Hf silicate: An atomic view

被引:11
作者
Lee, JH
Ichikawa, M
机构
[1] AIST, JRCAT, Tsukuba, Ibaraki 3050046, Japan
[2] Hynix Semicond Inc, Memory R&D Div, Ichon 467701, Kyoungki, South Korea
[3] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2002年 / 20卷 / 05期
关键词
D O I
10.1116/1.1494814
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Multiple phase structures of crystalline hafnium silicide precipitated from the silicate have been found as a function of temperature (900-1000 degreesC) by using scanning tunneling microscopy and x-ray photoelectron spectroscopy. At 900 degreesC, a crystalline silicate structure transforms into a bulklike (1 X 1) "facetbar" of HfSi2 near the topmost surface, but into a "platelet" around the interface with Si. A Si-depletion zone is found to only form near platelets, not facetbars. Upon further annealing to 1000 degreesC, facetbars likely transform into platelets, and the atomic structure of a platelet also transforms to a patchlike feature having two equivalent antiphase sites, which are shifted by a half (similar to2.3 Angstrom) of the (1 X 1) unit length along the <110> directions. (C) 2002 American Vacuum Society.
引用
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页码:1824 / 1827
页数:4
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