STRUCTURE OF NICKEL SILICIDE ON SI(001) - AN ATOMIC VIEW

被引：12

作者：

KHANG, Y ^{[1
]}

KAHNG, SJ ^{[1
]}

MANG, KM ^{[1
]}

JEON, D ^{[1
]}

LEE, JH ^{[1
]}

KIM, YN ^{[1
]}

KUK, Y ^{[1
]}

机构：

[1] SEOUL NATL UNIV,ISRC,SEOUL 151742,SOUTH KOREA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 03期

关键词：

D O I：

10.1116/1.587713

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The structure of epitaxially grown Ni silicide on Si(001) has been studied by scanning tunneling microscopy. Atomically resolved STM images of this surface show unreconstructed (1x1) NiS2 islands and a (2X1) adsorbed Ni layer. The NiSi2 islands often contain twin boundaries with inverse pyramidal structures and ''facet bars'' at increased coverage. From observed images, it is suggested that the poor reproducibility in the Schottky barrier height of this interface originates from the complex interface structure.

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页码：2094 / 2096

页数：3

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