Integration of high voltage field emission display followed by macro- and nanostructural analysis on microtip

被引:5
作者
Kim, JM
Lee, HW
Choi, YS
Lee, NS
Jung, JE
Kim, JW
Choi, WB
Park, YJ
Choi, JH
Jin, YW
Yi, WK
Park, NS
Park, GS
Chee, JK
机构
[1] Samsung Adv Inst Technol, Display & Mat Lab, Mat & Device Sector, Suwon 440600, South Korea
[2] Samsung Adv Inst Technol, Analyt Engn Lab, Suwon 440600, South Korea
[3] Hongik Univ, Coll Engn, Sch Elect & Elect Engn, Seoul 121791, South Korea
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 02期
关键词
D O I
10.1116/1.591292
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For resolving electron beam focusing and electric field breakdown between the anode and cathode plates in a high voltage field emission display (FED), the metal mesh grids are adapted in one body with spacers. The spacer charging mechanism is modeled in the real panel domain and confirmed by experiment. We analyze the morphology and the chemical composition modifications of the microtips in the narrow vacuum gap of a 5.2 in. FED panel, and infer possible degradation mechanisms in a FED device from our experimental data. The degree of oxidation formed on the microtip surface during fabrication and device operation is studied. Gas aging method for suppressing oxidation on the microtips and stabilizing phosphor is implemented for our 5.2 in. high voltage FED. (C) 2000 American Vacuum Society. [S0734-211X(00)07202-4].
引用
收藏
页码:888 / 895
页数:8
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