Liquid immersion lithography - Evaluation of resist issues

被引：62

作者：

Hinsberg, W ^{[1
]}

Wallraff, G ^{[1
]}

Larson, C ^{[1
]}

Davis, B ^{[1
]}

Deline, V ^{[1
]}

Raoux, S ^{[1
]}

Miller, D ^{[1
]}

Houle, F ^{[1
]}

Hoffnagle, J ^{[1
]}

Sanchez, M ^{[1
]}

Rettner, C ^{[1
]}

Sundberg, L ^{[1
]}

Medeiros, D ^{[1
]}

Dammel, R ^{[1
]}

Conley, W ^{[1
]}

机构：

[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXI, PTS 1 AND 2 | 2004年 / 5376卷

关键词：

chemically amplified resists; immersion; resolution; contamination;

D O I：

10.1117/12.536576

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We address in this report a set of key questions tied to the implementation of liquid immersion lithography, from the perspective of the resist materials. We discuss the broad question of whether chemically amplified resists are capable of achieving the spatial resolution that ultimately will be required for the most advanced immersion scenario. Initial studies undertaken using model 193 nm resist materials provide some insight into how an aqueous liquid immersion process can affect the resist material.

引用

页码：21 / 33

页数：13

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