Method of measuring the spatial resolution of a photoresist

被引：37

作者：

Hoffnagle, JA ^{[1
]}

Hinsberg, WD ^{[1
]}

Sanchez, MI ^{[1
]}

Houle, FA ^{[1
]}

机构：

[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

OPTICS LETTERS | 2002年 / 27卷 / 20期

关键词：

D O I：

10.1364/OL.27.001776

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

By analysis of the response of a high-contrast photoresist to sinusoidal illumination, generated interferometrically, one can extract a phenomenological modulation transfer function of the resist material, thereby characterizing its spatial resolution. Deep-ultraviolet interferometric lithography allows the resist response to be quantified at length scales below 100 nm. As an example, the resolution (FWHM) of the commercial resist UVII-HS is found to be approximately 50 nm. This simple method can be applied to materials under development for advanced photolithography with short-wavelength illumination. (C) 2002 Optical Society of America.

引用

页码：1776 / 1778

页数：3

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