Theory of AlN, GaN, InN and their alloys

被引：169

作者：

vanSchilfgaarde, M ^{[1
]}

Sher, A ^{[1
]}

Chen, AB ^{[1
]}

机构：

[1] AUBURN UNIV,DEPT PHYS,AUBURN,AL 36349

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 178卷 / 1-2期

关键词：

D O I：

10.1016/S0022-0248(97)00073-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This review focuses on the fundamental properties of III-V compound semiconductors from a theoretical or computational standpoint. Its purpose is to summarize the contributions of electronic structure theory to the present context and to provide some foundations for the modern techniques. This will enable one to assess the limitations of the techniques employed previously.

引用

页码：8 / 31

页数：24

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