Effects of Se flux on the microstructure of Cu(In,Ga)Se2 thin film deposited by a three-stage co-evaporation process

被引：75

作者：

Kim, Ki Hwan ^{[1
]}

Yoon, Kyung Hoon ^{[1
]}

Yun, Jae Ho ^{[1
]}

Ahn, Byung Tae ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2006年 / 9卷 / 08期

关键词：

D O I：

10.1149/1.2208011

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Cu(In,Ga)Se-2(CIGS) films were deposited by three-stage co-evaporation of elemental sources and effects of Se flux on CIGS film were investigated. With an appropriate Se flux (15 angstrom/s), faceted and tightly connected CIGS grains were developed at the film surface, and the highest conversion efficiency, 17.57%, was achieved in CdS/CIGS solar cells. When the Se flux was high, large grains with less (112) preferred orientation and pores along the grain boundaries were observed. As a result, the cell conversion efficiency was deteriorated. Precise control of Se flux, especially at the third stage, was critical to obtain high-performance CIGS solar cells. (c) 2006 The Electrochemical Society.

引用

页码：A382 / A385

页数：4

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