Effects of Se flux on the microstructure of Cu(In,Ga)Se2 thin film deposited by a three-stage co-evaporation process

被引:75
作者
Kim, Ki Hwan [1 ]
Yoon, Kyung Hoon [1 ]
Yun, Jae Ho [1 ]
Ahn, Byung Tae [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
关键词
D O I
10.1149/1.2208011
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Cu(In,Ga)Se-2(CIGS) films were deposited by three-stage co-evaporation of elemental sources and effects of Se flux on CIGS film were investigated. With an appropriate Se flux (15 angstrom/s), faceted and tightly connected CIGS grains were developed at the film surface, and the highest conversion efficiency, 17.57%, was achieved in CdS/CIGS solar cells. When the Se flux was high, large grains with less (112) preferred orientation and pores along the grain boundaries were observed. As a result, the cell conversion efficiency was deteriorated. Precise control of Se flux, especially at the third stage, was critical to obtain high-performance CIGS solar cells. (c) 2006 The Electrochemical Society.
引用
收藏
页码:A382 / A385
页数:4
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