共 14 条
Effects of Se flux on the microstructure of Cu(In,Ga)Se2 thin film deposited by a three-stage co-evaporation process
被引:75
作者:
Kim, Ki Hwan
[1
]
Yoon, Kyung Hoon
[1
]
Yun, Jae Ho
[1
]
Ahn, Byung Tae
[1
]
机构:
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
关键词:
D O I:
10.1149/1.2208011
中图分类号:
O646 [电化学、电解、磁化学];
学科分类号:
081704 ;
摘要:
Cu(In,Ga)Se-2(CIGS) films were deposited by three-stage co-evaporation of elemental sources and effects of Se flux on CIGS film were investigated. With an appropriate Se flux (15 angstrom/s), faceted and tightly connected CIGS grains were developed at the film surface, and the highest conversion efficiency, 17.57%, was achieved in CdS/CIGS solar cells. When the Se flux was high, large grains with less (112) preferred orientation and pores along the grain boundaries were observed. As a result, the cell conversion efficiency was deteriorated. Precise control of Se flux, especially at the third stage, was critical to obtain high-performance CIGS solar cells. (c) 2006 The Electrochemical Society.
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页码:A382 / A385
页数:4
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