Role of defects in the anomalous photoconductivity in ZnO nanowires

被引：146

作者：

Bera, A. ^{[1
]}

Basak, D. ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, India

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 16期

关键词：

adsorption; annealing; defect states; electron-hole recombination; energy gap; II-VI semiconductors; nanotechnology; nanowires; oxygen; photoconductivity; photoluminescence; semiconductor growth; semiconductor quantum wires; water; wide band gap semiconductors; zinc compounds; NANORODS;

D O I：

10.1063/1.3123167

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The anomalous photocurrent decay in aqueous solution grown ZnO nanowires (NWs) under steady ultraviolet light illumination have been investigated. The photocurrent growth-decay measurements using the above-band and subband gap light excitation energies in the as-grown and annealed NWs show that while a V-Zn-related defect complex is formed by the surface adsorbed H2O molecules, a faster carrier trapping by the surface adsorbed O-2 molecules and a slower carrier recombination at the defect, Zn-i cause the photocurrent decay under steady illumination supported by the results of the photocurrent spectra and photoluminescence measurements. The predicted mechanism has been explained through a model.

引用

页数：3

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