Quantized conductance of Si atomic wires

被引:63
作者
Mozos, JL
Wan, CC
Taraschi, G
Wang, J
Guo, H
机构
[1] MCGILL UNIV, CTR PHYS MAT, MONTREAL, PQ H3A 2T8, CANADA
[2] MCGILL UNIV, DEPT PHYS, MONTREAL, PQ H3A 2T8, CANADA
[3] UNIV HONG KONG, DEPT PHYS, HONG KONG, HONG KONG
关键词
D O I
10.1103/PhysRevB.56.R4351
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have performed first-principles pesudopotential calculations of the quantum transport properties of a chain of Si atoms connected to the outside through long leads. By solving a three-dimensional quantum scattering problem we have computed the conductance for several atomic wires with up to eight Si atoms. The Si atomic wires are found to be metallic and we observed quantized conductance in units of 2e(2)/h. A conductance dip is found to develop near the onset of the second quantized plateau as the number of atoms increases, and this can be explained by the existence of a gap in the density of states when the atomic chain is infinitely long.
引用
收藏
页码:R4351 / R4354
页数:4
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