Experimental evidence of the low-temperature formation of gamma-In2Se3 thin films obtained by a solid-state reaction

被引:77
作者
Marsillac, S [1 ]
CombotMarie, AM [1 ]
Bernede, JC [1 ]
Conan, A [1 ]
机构
[1] IMN,LAB CHIM SOLIDES,F-44072 NANTES 02,FRANCE
关键词
annealing; crystallization; selenides; transmission electron microscopy;
D O I
10.1016/S0040-6090(96)08799-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In2Se3 coatings were obtained by a solid-state reaction, induced by annealing, between the In and Se constituents sequentially deposited in thin film form. The films crystallized in the gamma-In2Se3 phase. To confirm and to characterize this phase, the films have been investigated by microprobe analysis and X-ray photoelectron spectroscopy, transmission electron microscopy and X-ray diffraction, Raman diffusion and optical absorption measurements. It is shown that selected area diffraction (SAD) patterns of the gamma-In2Se3 phase are obtained and that a very good correlation exists between the planes obtained from X-ray spectra and SAD patterns. Raman diffusion and optical absorption also lead to characteristic data of the gamma-In2Se3 phase, and are compared with the values of the other phases. Moreover it is shown that the occurrence of the gamma-phase is related to the annealing under selenium atmosphere and to the initial Se/In atomic ratio.
引用
收藏
页码:14 / 20
页数:7
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