Changes in carrier dynamics induced by proton irradiation in quantum dots

被引：14

作者：

Marcinkevicius, S

Leon, R

Cechavicius, B

Siegert, J

Lobo, C

Magness, B

Taylor, W

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

[2] Royal Inst Technol, Dept Microelect & Informat Technol, S-16440 Kista, Sweden

[3] Lithuania Acad Sci, Inst Semicond Phys, LT-2600 Vilnius, Lithuania

[4] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[5] Calif State Univ Los Angeles, Dept Phys & Astron, Los Angeles, CA 90032 USA

来源：

PHYSICA B-CONDENSED MATTER | 2002年 / 314卷 / 1-4期

关键词：

quantum dots; proton irradiation; time-resolved photoluminescence;

D O I：

10.1016/S0921-4526(01)01361-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effects of proton irradiation on carrier dynamics were investigated by time-resolved photoluminescence on different InGaAs/GaAs quantum-dot (QD) structures varying in QD surface density and substrate orientation, as well as thin InGaAs quantum wells. The carrier lifetimes in the dots are much less affected by proton irradiation than in the wells. Decrease in lifetimes of only 40 percent at the highest proton dose are observed in some of the QDs, whereas an similar to20 to similar to40-fold decrease is observed in the wells. Similar trends were observed for all quantum dot samples. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：203 / 206

页数：4

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