Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

被引：97

作者：

Leon, R

Swift, GM

Magness, B

Taylor, WA

Tang, YS

Wang, KL

Dowd, P

Zhang, YH

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

[2] Calif State Univ Los Angeles, Dept Phys & Astron, Los Angeles, CA 90032 USA

[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[4] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[5] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 15期

关键词：

D O I：

10.1063/1.126259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoluminescence (PL) emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement. Some additional radiation-induced changes in photocarrier recombination from QDs, which include a slight increase in PL emission with low and intermediate proton doses, are also examined. (C) 2000 American Institute of Physics. [S0003-6951(00)01615-6].

引用

页码：2074 / 2076

页数：3

共 22 条

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