Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

被引:97
作者
Leon, R
Swift, GM
Magness, B
Taylor, WA
Tang, YS
Wang, KL
Dowd, P
Zhang, YH
机构
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
[2] Calif State Univ Los Angeles, Dept Phys & Astron, Los Angeles, CA 90032 USA
[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[4] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[5] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
关键词
D O I
10.1063/1.126259
中图分类号
O59 [应用物理学];
学科分类号
摘要
The photoluminescence (PL) emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement. Some additional radiation-induced changes in photocarrier recombination from QDs, which include a slight increase in PL emission with low and intermediate proton doses, are also examined. (C) 2000 American Institute of Physics. [S0003-6951(00)01615-6].
引用
收藏
页码:2074 / 2076
页数:3
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