A comparison of spectroscopic and microscopic observations of ion-induced intermixing in InGaAs/InP quantum wells

被引：15

作者：

Piva, PG ^{[1
]}

Goldberg, RD

Mitchell, IV

Chen, HJ

Feenstra, RM

Weatherly, GC

McComb, DW

Aers, GC

Poole, PJ

Charbonneau, S

机构：

[1] Univ Western Ontario, Dept Phys & Astron, London, ON N6A 3K7, Canada

[2] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[3] McMaster Univ, Brockhouse Inst Mat Res, Hamilton, ON L8S 4M1, Canada

[4] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[5] Univ Glasgow, Dept Chem, Glasgow G12 8QQ, Lanark, Scotland

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 13期

关键词：

D O I：

10.1063/1.121185

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using n-doped InGaAs/InP multi-quantum-well samples we compare measurements of ion-beam-induced quantum well broadening made by cross-sectional scanning tunneling microscopy and cross-sectional scanning transmission electron microscopy with the broadening calculated from the blueshift of the low temperature photoluminescence peak using different models of the intermixing process. Results are consistent with a simple square well model used to interpret photoluminescence shifts, but disagree with a model of separate Fick's law diffusion on group III and V sublattices. (C) 1998 American Institute of Physics.

引用

页码：1599 / 1601

页数：3

共 14 条

[1] FABRICATION OF NANOSTRUCTURES IN STRAINED INGAAS/GAAS QUANTUM-WELLS BY FOCUSED-ION-BEAM IMPLANTATION [J].

ALLARD, LB ;

AERS, GC ;

CHARBONNEAU, S ;

JACKMAN, TE ;

WILLIAMS, RL ;

TEMPLETON, IM ;

BUCHANAN, M ;

STEVANOVIC, D ;

ALMEIDA, FJD .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (02) :422-428

[2] CARRIER CONFINEMENT POTENTIAL IN QUANTUM-WELL WIRES FABRICATED BY IMPLANTATION-ENHANCED INTERDIFFUSION IN THE GAAS-GA1-XALXAS SYSTEM [J].

CIBERT, J ;

PETROFF, PM .

PHYSICAL REVIEW B, 1987, 36 (06) :3243-3246

[3]

Egerton R.F., 2011, Electron Energy-loss Spectroscopy in the Electron Microscope, Vthird, DOI DOI 10.1007/978-1-4419-9583-4

[4] SCANNING-TUNNELING-MICROSCOPY OF INAS/GASB SUPERLATTICES WITH VARIOUS GROWTH-CONDITIONS [J].

FEENSTRA, RM ;

COLLINS, DA ;

MCGILL, TC .

SUPERLATTICES AND MICROSTRUCTURES, 1994, 15 (02) :215-220

[5] SCANNING-TUNNELING-MICROSCOPY OF INAS/GASB SUPERLATTICES - SUBBANDS, INTERFACE ROUGHNESS, AND INTERFACE ASYMMETRY [J].

FEENSTRA, RM ;

COLLINS, DA ;

TING, DZY ;

WANG, MW ;

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04) :2592-2597

[6] CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY OF ILL-V SEMICONDUCTOR STRUCTURES [J].

FEENSTRA, RM .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (12) :2157-2168

[7] THE CONTROL AND EVALUATION OF BLUE-SHIFT IN GAINAS/GAINASP MULTIPLE-QUANTUM-WELL STRUCTURES FOR INTEGRATED LASERS AND STARK-EFFECT MODULATORS [J].

MALLARD, RE ;

THRUSH, EJ ;

MARTIN, RW ;

WONG, SL ;

NICHOLAS, RJ ;

PRITCHARD, RE ;

HAMILTON, B ;

LONG, NJ ;

GALLOWAY, SA ;

CHEW, A ;

SYKES, DE ;

THOMPSON, J ;

SCARROTT, K ;

JOWETT, JM ;

SATZKE, K ;

NORMAN, AG ;

BOOKER, GR .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (06) :1156-1165

[8] Cross-sectional transmission electron microscopy and scanning tunnelling microscopy applied to investigation of phase segregation in III-V multilayers grown by molecular beam epitaxy [J].

McComb, DW ;

Okada, T ;

Weatherly, GC ;

Wolkow, RA ;

Hulse, JE .

PHILOSOPHICAL MAGAZINE LETTERS, 1996, 73 (03) :129-136

[9] EFFECTS OF INTERDIFFUSION ON THE SUB-BAND-EDGE STRUCTURE OF IN0.53GA0.47AS/INP SINGLE QUANTUM-WELLS [J].

MICALLEF, J ;

LI, EH ;

WEISS, BL .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) :7524-7532

[10] ON THE ELECTRON-DIFFRACTION CONTRAST OF COHERENTLY STRAINED SEMICONDUCTOR LAYERS [J].

PEROVIC, DD ;

WEATHERLY, GC ;

HOUGHTON, DC .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1991, 64 (01) :1-28

← 1 2 →