Nitride semiconductors - impact on the future world

被引：50

作者：

Akasaki, I

机构：

[1] Meijo Univ, Dept Mat Sci & Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[2] Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷 / 1-4 II期

基金：

日本学术振兴会;

关键词：

crystallites; doping; organometallic vapor phase epitaxy; nitrides; semiconducting materials; light emitting diodes; laser diodes; field effect transistors; bipolar transistors;

D O I：

10.1016/S0022-0248(01)02077-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A significant improvement in the crystalline quality of GaN has made it possible to produce p-type nitrides and to control the conductivity of n-type nitrides, as well as to produce high-quality quantum structures. These breakthroughs have led to such developments as high-performance short-wavelength photonic devices and high-speed electronic devices. All of these devices are the most environment-friendly ones, they are tough and should enable a tremendous saving in energy. The evolution of nitride semiconductors will have a great impact on the future world. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：905 / 911

页数：7

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