Features of charge carrier transport determined from carrier extraction current in μc-Si:H

Temperature and electric field dependencies of mobility and concentration transients of electrons and holes using modified charge extraction by the linearly increasing voltage (CELIV) method in slightly doped n-type, p-type and undoped micro crystalline silicon (muc-Si:H) have been investigated. The results indicates that: the mobility of majority carriers causes temperature and electric field dependencies of conductivity: the photoconductivity transient is mainly determined by transient of charge carrier concentration, at room temperature the charge carrier transport is controlled by multiple trapping to energetic distributed localised states; at lower temperature the features characteristic of hopping transport have been obtained. (C) 2002 Elsevier Science B.V. All rights reserved.