Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces

被引：156

作者：

Michl, Julia ^{[1
]}

Teraji, Tokuyuki ^{[2
]}

Zaiser, Sebastian ^{[1
]}

Jakobi, Ingmar ^{[1
]}

Waldherr, Gerald ^{[1
]}

Dolde, Florian ^{[1
]}

Neumann, Philipp ^{[1
]}

Doherty, Marcus W. ^{[3
]}

Manson, Neil B. ^{[3
]}

Isoya, Junichi ^{[4
]}

Wrachtrup, Joerg ^{[1
]}

机构：

[1] Univ Stuttgart, Res Ctr SCoPE & IQST, Inst Phys 3, D-70550 Stuttgart, Germany

[2] Natl Inst Mat Sci, Opt & Elect Mat Unit, Tsukuba, Ibaraki 3050044, Japan

[3] Australian Natl Univ, Res Sch Phys & Engn, Laser Phys Ctr, Canberra, ACT 0200, Australia

[4] Univ Tsukuba, Res Ctr Knowledge Communities, Tsukuba, Ibaraki 3058550, Japan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 10期

关键词：

AMBIENT CONDITIONS; NUCLEAR-SPIN; SINGLE SPINS; CVD DIAMOND; ENTANGLEMENT; THERMOMETRY; MICROSCOPY; DEPENDENCE; COHERENCE;

D O I：

10.1063/1.4868128

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Synthetic diamond production is a key to the development of quantum metrology and quantum information applications of diamond. The major quantum sensor and qubit candidate in diamond is the nitrogen-vacancy (NV) color center. This lattice defect comes in four different crystallographic orientations leading to an intrinsic inhomogeneity among NV centers, which is undesirable in some applications. Here, we report a microwave plasma-assisted chemical vapor deposition diamond growth technique on (111)-oriented substrates, which yields perfect alignment (94% +/- 2%) of as-grown NV centers along a single crystallographic direction. In addition, clear evidence is found that the majority (74% +/- 4%) of the aligned NV centers were formed by the nitrogen being first included in the (111) growth surface and then followed by the formation of a neighboring vacancy on top. The achieved homogeneity of the grown NV centers will tremendously benefit quantum information and metrology applications. (C) 2014 AIP Publishing LLC.

引用

页数：5

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