Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces

被引:156
作者
Michl, Julia [1 ]
Teraji, Tokuyuki [2 ]
Zaiser, Sebastian [1 ]
Jakobi, Ingmar [1 ]
Waldherr, Gerald [1 ]
Dolde, Florian [1 ]
Neumann, Philipp [1 ]
Doherty, Marcus W. [3 ]
Manson, Neil B. [3 ]
Isoya, Junichi [4 ]
Wrachtrup, Joerg [1 ]
机构
[1] Univ Stuttgart, Res Ctr SCoPE & IQST, Inst Phys 3, D-70550 Stuttgart, Germany
[2] Natl Inst Mat Sci, Opt & Elect Mat Unit, Tsukuba, Ibaraki 3050044, Japan
[3] Australian Natl Univ, Res Sch Phys & Engn, Laser Phys Ctr, Canberra, ACT 0200, Australia
[4] Univ Tsukuba, Res Ctr Knowledge Communities, Tsukuba, Ibaraki 3058550, Japan
关键词
AMBIENT CONDITIONS; NUCLEAR-SPIN; SINGLE SPINS; CVD DIAMOND; ENTANGLEMENT; THERMOMETRY; MICROSCOPY; DEPENDENCE; COHERENCE;
D O I
10.1063/1.4868128
中图分类号
O59 [应用物理学];
学科分类号
摘要
Synthetic diamond production is a key to the development of quantum metrology and quantum information applications of diamond. The major quantum sensor and qubit candidate in diamond is the nitrogen-vacancy (NV) color center. This lattice defect comes in four different crystallographic orientations leading to an intrinsic inhomogeneity among NV centers, which is undesirable in some applications. Here, we report a microwave plasma-assisted chemical vapor deposition diamond growth technique on (111)-oriented substrates, which yields perfect alignment (94% +/- 2%) of as-grown NV centers along a single crystallographic direction. In addition, clear evidence is found that the majority (74% +/- 4%) of the aligned NV centers were formed by the nitrogen being first included in the (111) growth surface and then followed by the formation of a neighboring vacancy on top. The achieved homogeneity of the grown NV centers will tremendously benefit quantum information and metrology applications. (C) 2014 AIP Publishing LLC.
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页数:5
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