The effect of water related traps on the reliability of organic based transistors

被引：12

作者：

Gomes, H. L.

Stallinga, P.

Colle, M.

Biscarini, F.

de Leeuw, D. M.

机构：

[1] Univ Algarve, Fac Sci & Technol, Dept Elect Engn & Informat, P-8005139 Faro, Portugal

[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

[3] CNR, Ist Studies Mat Nanostrutt, I-40129 Bologna, Italy

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 9-20期

关键词：

thin film transistors;

D O I：

10.1016/j.jnoncrysol.2005.10.069

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electrical stability of metal-insulator semiconductor (MIS) capacitors and field-effect transistor structures based in organic semiconductors were investigated. The device characteristics were studied using steady state measurements AC admittance measurements as well as techniques for addressing trap states. Temperature-dependent measurements show clear evidence that an electrical instability occurs above 200 K and is caused by an electronic trapping process. Experimental results show that water is responsible for the trapping mechanism. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1761 / 1764

页数：4

共 17 条

[11]

MUCK T, 2003, MAT RES SOCIAL S P, V771

[12] Kinetics of bias stress and bipolaron formation in polythiophene [J].