Resonant interband tunnelling diode with high peak current density

被引：3

作者：

Kitabayashi, H

Waho, T

Yamamoto, M

机构：

[1] NTT System Electronics Laboratories, Atsugi-shi, Kanagawu 243-01

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 01期

关键词：

tunnel diodes; negative resistance;

D O I：

10.1049/el:19970019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Peak current densities (I-p) as high as 1.3 x 10(5) A/cm(2) with peak-to-valley current ratios of 3.7 are reported for InAs/AlSb/GaSb/AlSb/InAs double-barrier resonant interband tunnelling diodes. The fact that 1-monolayer-thick AlSb barriers exist between the InAs and GaSb layers is essential in obtaining such a high value of I-p.

引用

页码：102 / 104

页数：3

共 6 条

[1] ON THE EFFECT OF THE BARRIER WIDTHS IN THE INAS/ALSB/GASB SINGLE-BARRIER INTERBAND TUNNELING STRUCTURES [J].