Low-temperature preparation of highly (111) oriented PZT thin films by a modified sol-gel technique

被引：61

作者：

Meng, XJ ^{[1
]}

Cheng, JG ^{[1
]}

Li, B ^{[1
]}

Guo, SL ^{[1
]}

Ye, HJ ^{[1
]}

Chu, JH ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 208卷 / 1-4期

基金：

中国国家自然科学基金;

关键词：

PZT thin films; modified sol-gel technique; orientation; RTA; layer-by-layer;

D O I：

10.1016/S0022-0248(99)00420-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A modified sol-gel technique has been developed for the preparation of PZT thin films on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates. The technique uses zirconium nitrate to substitute for the conventional Zr-alkoxides, which enhances the stability of the precursor solution and simplifies the sol-gel processing significantly. Using a modified precursor solution and rapid thermal annealing (RTA) process, highly(1 1 1) oriented PbZr0.5Ti0.5O3 (PZT 50/50) thin films are obtained even at a low annealing temperature of 550 degrees C. The low-temperature processing is assisted by a layer-by-layer annealing method. The PZT 50/50 thin film annealed at 550 degrees C showed a well-saturated hysteresis loop at an applied electric field of 200 kV/cm with P-r and E-e of 11 mu C/cm(2) and 45 kV/cm, respectively. The dielectric constant and dielectric loss of the him are 520 and 0.023, respectively. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：541 / 545

页数：5

共 17 条

[1] FERROELECTRIC (PB,LA)(ZR,TI)O3 EPITAXIAL THIN-FILMS ON SAPPHIRE GROWN BY RF-PLANAR MAGNETRON SPUTTERING [J].