Optimization of HSQ resist e-beam processing technique on GaAs material

被引：25

作者：

Lauvernier, D ^{[1
]}

Vilcot, JP ^{[1
]}

François, M ^{[1
]}

Decoster, D ^{[1
]}

机构：

[1] Univ Sci & Technol Lille, Inst Elect Microelect & Nanotechnol, CNRS, UMR 8520, F-59652 Villeneuve Dascq, France

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 75卷 / 02期

关键词：

HSQ resist; electron beam lithography; KOH developer; nano-patterning; III/V semiconductors;

D O I：

10.1016/j.mee.2004.05.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogen SilsesQuioxane is recently known as a negative tone e-beam resist for Si wafer technology. For III/V semiconductors, as GaAs reported here, the usual TMAH developer does not result in a good quality patterning; in order to overcome that, this paper presents the use of KOH-based developer as alternative processing. Its process conditions, that are described hereby, lead to higher contrast combined to higher process latitude. Finally, single lines down to 60 nm width and nanometer-gratings are investigated with a minimum of roughness illustrated by an AFM study. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：177 / 182

页数：6

共 8 条

[1] Materials issues with thin film hydrogen silsesquioxane low K dielectrics [J].